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Principal Engineer – NVM Thin Films Process Integration

Intel


Location:
Boise, ID
Date:
08/18/2017
2017-08-182017-09-16
Job Code:
JR0030319
Categories:
  • Engineering
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Job Details

Principal Engineer – NVM Thin Films Process Integration Careers at Intel in Boise, ID
   
Job ID: JR0030319
Job Category: Engineering
Primary Location: Boise, ID US
Other Locations:
Job Type: Experienced Hire

Principal Engineer – NVM Thin Films Process Integration

Job Description

Principal Engineers at Intel are active technical leaders inside and outside the company. A Principal Thin Films Process Integration Engineer in NSG Technology Development is responsible for leading research and development of the next generation 3D NAND or 3DXpoint Non-volatile memory technology thin films processes to support Intel's growing business in storage and memory.

The responsibilities will include:

  • Leading and managing a direct and matrix reporting group of engineers responsible for developing the thin films process technology roadmap, including process architecture, process capability, process roadmap, tool capability and roadmap and extendibility, silicon experimentation and analysis.
  • The Principal Engineer is viewed as an expert providing technical direction and leadership in tackling complex cross-functional technology issues, and the engineer will initiate and execute advanced research with significant long-term impact to the business.
  • You will collaborate with technology development partners in defining goals, developing the vision, aligning strategy, and driving fast paced silicon development to meet aggressive technology node cadences.  Ensure tool and process roadmaps are aligned to technology capability requirements.
  • You will work with the process and integration teams to ensure seamless integration of etch (thin films) as well as with the manufacturing Fabs to ensure a seamless technology transfer and ramp to support the full envelope of component and system products.
  • The position is based in Boise, ID.


Qualifications

Requirements:
• MS or Ph. D in Electrical Engineering, Physics, Materials Science, or related fields with 8 years of experience working in the areas of semiconductor thin films technology, semiconductor device physics, and memory.
• Direct experiences in thin films process engineering organizations.
• Integration or Device experience in addition to process engineering experience is also highly desirable.
• Good analytical and technical problem solving silks.
• Demonstrated teamwork, communication, and leadership skills.
• Excels at cross-functional innovation working with process, product, design, reliability, and system engineering.

Inside this Business Group

Non-Volatile Solutions Memory Group:  The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices.  The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.


Posting Statement. Intel prohibits discrimination based on race, color, religion, gender, national origin, age, disability, veteran status, marital status, pregnancy, gender expression or identity, sexual orientation or any other legally protected status.

Position of Trust. This role is a Position of Trust. Should you accept this position, you must consent to and pass an extended Background Investigation, which includes (subject to country law), extended education, SEC sanctions, and additional criminal and civil checks. For internals, this investigation may or may not be completed prior to starting the position. For additional questions, please contact your Talent Consultant.

   

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