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3D XPoint Advanced Memory Technology Development Engineer

Intel


Location:
Santa Clara, CA
Date:
01/15/2018
2018-01-152018-02-13
Job Code:
JR0048819
Categories:
  • Engineering
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Job Details

3D XPoint Advanced Memory Technology Development Engineer Careers at Intel in Santa Clara, CA
   
Job ID: JR0048819
Job Category: Engineering
Primary Location: Santa Clara, CA US
Other Locations:
Job Type: Experienced Hire

3D XPoint Advanced Memory Technology Development Engineer

Job Description

3D XPoint Advanced Memory Technology Development Engineer

This is an exciting opportunity to work on the latest breakthrough in Non-Volatile Memory Technology: Intel® 3D XPoint™ memory and Intel® Optane™ Technology.

This role’s primary responsibilities include electrical characterization of 3D XPoint memory arrays, developing memory operation and testing algorithms, collaborating with design engineering, test engineering, product engineering, and process engineering in the development of Intel® 3D XPoint™ memory technology and delivery of the technology to high-volume manufacturing, as well as collaborating with reliability engineering and systems engineering for the qualification of Intel® Optane™ Technology products.

The right candidate will be highly confident in his/her expert knowledge of fundamental device physics, electrical circuits, mathematics and statistics, and will be familiar with memory architectures. The right candidate must also be passionate to be involved in the development of cutting-edge technology, and be excited to be engaged in a fast-paced working environment.

Behavioral Requirements: Ability to work independently and efficiently to address complex technical challenges, Excellent communication and presentation skills, and have a demonstrated track-record of working effectively in a cross-functional team setting.


Qualifications

Education:

Candidate should possess a BS or a MS degree with at least 3 years additional experience or a Doctor of Philosophy degree with at least 1 year additional experience, in Physics, Electrical Engineering, or a related field.

Minimum Requirements:

  • Minimum 3 years of experience in Semiconductor device physics.
  • Minimum 3 years of experience in Characterization or Modeling of advanced semiconductor devices
  • Minimum 2 years of experience in programming and scripting languages, such as C++, Python, Matlab
  • Minimum 2 years of experience in statistical analysis methods and analysis software, such as Excel and JMP

Preferred Qualifications:

  • Experience with electrical test equipment such as oscilloscope, pulse generator, parameter analyzer
  • Prior experience working on a memory technology (e.g. NAND/NOR flash)

Inside this Business Group

Non-Volatile Solutions Memory Group:  The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices.  The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.


Posting Statement. Intel prohibits discrimination based on race, color, religion, gender, national origin, age, disability, veteran status, marital status, pregnancy, gender expression or identity, sexual orientation or any other legally protected status.
   

As an electronics industry innovator and a leader in corporate responsibility, we look for ways to apply our technology to address global challenges while serving as a role model for how companies should operate.

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